APTGT100SK170TG Datasheet, PDF (4/5 Pages) Microsemi Corporation – Buck chopper Trench + Field Stop IGBT Power Module

APTGT100SK170TG
Typical Performance Curve
Output Characteristics (VGE=15V)
200
175
TJ=25°C
150
125
100
TJ=125°C
75
50
25
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VCE (V)
Transfert Characteristics
200
175
TJ=25°C
150
125
TJ=125°C
100
75
50
TJ=125°C
25
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Switching Energy Losses vs Gate Resistance
100
87.5 ^{VCE = 900V}
V_GE =15V
75 _{IC = 100A}
Eon
62.5 ^{TJ = 125°C}
50
37.5
Eoff
25
12.5
0
0
Er
5 10 15 20 25 30 35 40
Gate Resistance (ohms)
Output Characteristics
200
TJ = 125°C ^VGE=20V
160
120
VGE=13V
80
VGE= 15V
40
VGE=9V
0
0
1
2
3
4
5
V_CE (V)
Energy losses vs Collector Current
100
VCE = 900V
80 ^{VGE = 15V}
R_G = 4.7Ω
T_J = 125°C
60
Eon
Eoff
40
20
Er
0
0 25 50 75 100 125 150 175 200
I_C (A)
Reverse Bias Safe Operating Area
250
200
150
100
50
VGE=15V
T_J=125°C
R_G=4.7Ω
0
0
400
800 1200 1600 2000
V_CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
0.2
0.9
IGBT
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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