APTGT100DA60T3AG Datasheet, PDF (4/5 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT Power Module

APTGT100DA60T3AG
Typical Performance Curve
Output Characteristics (V_GE=15V)
200
175
T_J=25°C
150
T_J=125°C
125
T_J=150°C
100
75
50
25
T_J=25°C
0
0 0.5 1 1.5 2 2.5 3
V_CE (V)
Output Characteristics
200
175 ^{TJ = 150°C}
V_GE=19V
150
V_GE=13V
125
100
V_GE=15V
75
50
V_GE=9V
25
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE (V)
Transfert Characteristics
200
175
T_J=25°C
150
125
100
75
T_J=125°C
50
25
0
5
T_J=150°C
67
T_J=25°C
8 9 10 11 12
V_GE (V)
Energy losses vs Collector Current
7
V_CE = 300V
6 V_GE = 15V
Eoff
5
R_G = 3.3Ω
T_J = 150°C
4
Er
3
2
1
Eon
0
0 25 50 75 100 125 150 175 200
I_C (A)
Switching Energy Losses vs Gate Resistance
8
V_CE = 300V
V_GE =15V
6 ^IC ^{= 100A}
Eoff
T_J = 150°C
Eon
4
2
Er
Eon
0
0
5 10 15 20 25 30
Gate Resistance (ohms)
Reverse Bias Safe Operating Area
250
200
150
100
V_GE=15V
50 _TJ=150°C
R_G=3.3Ω
0
0 100 200 300 400 500 600 700
V_CE (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
0.9
IGBT
0.3
0.7
0.2 0.5
0.3
0.1
0.1
0
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4–5