APTGL325A120D3G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Phase leg Trench + Field Stop IGBT4 Power Module

APTGL325A120D3G
Typical Performance Curve
Output Characteristics (V_GE=15V)
600
500
T_J=25°C
400
T_J=150°C
300
200
100
0
0
1
2
3
4
V_CE (V)
Output Characteristics
600
500 ^{TJ = 150°C}
V_GE=19V
400
V_GE=15V
300
200
V_GE=9V
100
0
0
1
2
3
4
V_CE (V)
Transfert Characteristics
600
T_J=25°C
500
400
300
200
T_J=150°C
100
0
5 6 7 8 9 10 11 12 13
V_GE (V)
Switching Energy Losses vs Gate Resistance
90
V_CE = 600V
75
V_GE =15V
I_C = 300A
Eon
60 T_J = 150°C
45
Eoff
30
Err
15
0
0
2.5
5
7.5
10
Gate Resistance (ohms)
Energy losses vs Collector Current
80
V_CE = 600V
Eon
V_GE = 15V
60 R_G = 1.5.Ω
T_J = 150°C
40
Eoff
Err
20
0
0 100 200 300 400 500 600
I_C (A)
Reverse Bias Safe Operating Area
600
450
300
V_GE=15V
150 _TJ=150°C
R_G=1.5Ω
0
0 300
600 900
V_CE (V)
1200 1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.9
0.08
0.7
0.06
0.5
IGBT
0.04 0.3
0.02 0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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