APTGF90DU60TG Datasheet, PDF (4/6 Pages) Microsemi Corporation – Dual common source NPT IGBT Power Module

Typical Performance Curve
Output characteristics (V_GE=15V)
350
250µs Pulse Test
300 _{< 0.5% Duty cycle}
TJ=-55°C
250
T J=2 5°C
200
150
TJ=125°C
100
50
0
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
250µs Pulse Test
250 < 0.5% Duty cycle
TJ=-55°C
200
150
100
50
0
0
TJ=25°C
TJ=125°C
TJ=-55°C
1 2 3 4 5 6 7 8 9 10
V_GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
7
TJ = 25°C
250µs Pulse Test
6 ^{< 0.5% Duty cycle}
5
Ic=180A
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
16
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
APTGF90DU60TG
Output Characteristics (V_GE=10V)
300
250µs Pulse Test
250 _{< 0.5% Duty cycle}
T J=-55 °C
200
T J=2 5°C
150
100
TJ=125°C
50
0
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
18
16 ^{IC = 90A}
14 ^{TJ = 25°C}
12
Gate Charge
VCE=120V
VCE=300V
10
VCE =4 80V
8
6
4
2
0
0 50 100 150 200 250 300 350
Gate Charge (nC)
On state Voltage vs Junction Temperature
4
3.5
3 ^Ic=180A
2.5
Ic=90A
2
1.5
Ic=45A
1
0.5
0
-50 -25 0
250µs Pulse Test
< 0.5% Duty cycle
V_GE = 15V
25 50 75 100 125
T_J, Junction Temperature (°C)
DC Collector Current vs Case Temperature
140
120
100
80
60
40
20
0
-50
-25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
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