APTGF75H120TG_10 Datasheet, PDF (4/5 Pages) Microsemi Corporation – Full - Bridge NPT IGBT Power Module

APTGF75H120TG
Typical Performance Curve
Output Characteristics (V_GE=15V)
150
125
T_J=25°C
100
75
50
T_J=125°C
25
0
0
1
2
3
4
5
6
V_CE (V)
Output Characteristics
150
T_J = 125°C
V_GE=15V
125
V_GE=20V
100
V_GE=12V
75
50
V_GE=9V
25
0
0
1
2
3
4
5
6
V_CE (V)
150
125
100
75
50
25
0
5
Transfert Characteristics
T_J=125°C
T_J=25°C
6 7 8 9 10 11 12
V_GE (V)
Switching Energy Losses vs Gate Resistance
35
30 ^{VCE = 600V}
Eon
V_GE =15V
25 ^IC ^{= 75A}
T_J = 125°C
20
15
10
Eoff
5
0
0 10 20 30 40 50 60 70
Gate Resistance (ohms)
Energy losses vs Collector Current
28
V_CE = 600V
24 _{VGE = 15V}
20 ^{RG = 7.5 Ω}
Eon
T_J = 125°C
16
12
Eoff
8
4
Er
0
0 25 50 75 100 125 150
I_C (A)
Reverse Bias Safe Operating Area
175
150
125
100
75
50
V_GE=15V
T_J=125°C
25 ^RG^{=7.5 Ω}
0
0
300 600 900 1200 1500
V_CE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
IGBT
0.25 _0.9
0.2 _0.7
0.15 _0.5
0.1 _0.3
0.05 ^0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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