APTGF50DU120TG Datasheet, PDF (4/6 Pages) Microsemi Corporation – Dual common source NPT IGBT Power Module

Typical Performance Curve
Output characteristics (V_GE=15V)
200
250µs Pulse Test
< 0.5% Duty cycle
T _J=2 5°C
160
120
80
T_J=125°C
40
0
0
2
4
6
8
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
250µs Pulse Test
250 < 0.5% Duty cycle
TJ=25°C
200
150
100
TJ=125°C
50
T_J=25°C
0
0
4
8
12
16
V_GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
9
8
T_J = 25°C
250µs Pulse Test
7 < 0.5% Duty cycle
Ic=100A
6
5
Ic=50A
4
3
2
Ic=25A
1
0
9 10 11 12 13 14 15 16
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
APTGF50DU120TG
Output Characteristics (VGE=10V)
50
250µs Pulse Test
< 0.5% Duty cycle
40
T _J=25°C
30
20
T_J =1 25°C
10
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
Gate Charge
18
16
IC = 50A
14
T_J = 25°C
V_CE=240V
V_CE=600V
12
10
V_CE=960V
8
6
4
2
0
0 50 100 150 200 250 300 350
Gate Charge (nC)
On state Voltage vs Junction Temperature
6
250µs Pulse Test
5 ^{< 0.5% Duty cycle}
V_GE = 15V
4
Ic=100A
Ic=50A
3
Ic=25A
2
1
0
-50
-25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
DC Collector Current vs Case Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
T_C, Case Temperature (°C)
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