APTGF350A60G Datasheet, PDF (4/6 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module

Typical Performance Curve
1200
1000
Output characteristics (V_GE=15V)
250µs Pulse Test
< 0.5% Duty cycle
T_J=-55°C
T_J=25°C
800
600
T_J=125°C
400
200
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
1200
1000
Transfer Characteristics
250µs Pulse Test
< 0.5% Duty cycle
800
600
400
200
0
0
T_J=125°C
T_J=25°C
T_J=-55°C
1 2 3 4 5 6 7 8 9 10
V_GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
7 ^{TJ = 25°C}
250µs Pulse Test
6 < 0.5% Duty cycle
5
Ic=720A
4
3
Ic=360A
2
1
Ic=180A
0
6
8
10
12
14
16
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
APTGF350A60G
1200
1000
Output Characteristics (V_GE=10V)
250µs Pulse Test
< 0.5% Duty cycle
T_J=-55°C
800
TJ=25°C
600
400
T_J=125°C
200
0
0
1
2
3
4
VCE, Collector to Emitter Voltage (V)
Gate Charge
18
16
IC = 360A
V_CE=120V
14
T_J = 25°C
12
V_CE=300V
10
8
V_CE=480V
6
4
2
0
0 200 400 600 800 1000 1200 1400
Gate Charge (nC)
On state Voltage vs Junction Temperature
4
3.5
Ic=720A
3
2.5
Ic=360A
2
1.5
Ic=180A
1
0.5
250µs Pulse Test
< 0.5% Duty cycle
V_GE = 15V
0
-50 -25 0 25 50 75 100 125
T_J, Junction Temperature (°C)
DC Collector Current vs Case Temperature
500
400
300
200
100
0
0 25 50 75 100 125 150
TC, Case Temperature (°C)
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