APTGF30A60T1G Datasheet, PDF (4/6 Pages) Microsemi Corporation – Phase leg NPT IGBT Power Module

Typical Performance Curve
Output characteristics (V_GE=15V)
80
250µs Pulse Test
< 0.5% Duty cycle
T_J=25°C
60
T_J=125°C
40
20
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
Transfer Characteristics
80
250µs Pulse Test
< 0.5% Duty cycle
60
40
20
0
0
T_J=125°C
T_J=25°C
1 2 3 4 5 6 7 8 9 10
V_GE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
T_J = 25°C
7
250µs Pulse Test
6
< 0.5% Duty cycle
5
Ic=60A
4
3
Ic=30A
2
1
Ic=15A
0
6
8
10
12
14
16
V_GE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
1.20
1.10
1.00
0.90
0.80
25
50
75
100
125
T_J, Junction Temperature (°C)
APTGF30A60T1G
50
37.5
Output Characteristics (V_GE=10V)
250µs Pulse Test
< 0.5% Duty cycle
T_J=25°C
25
12.5
T_J=125°C
0
0
1
2
3
4
V_CE, Collector to Emitter Voltage (V)
18
16
14
12
10
8
6
4
2
0
0
I_C = 30A
T_J = 25°C
20
Gate Charge
V_CE=120V
V_CE=300V
V_CE=480V
40 60 80 100 120
Gate Charge (nC)
On state Voltage vs Junction Temperature
4
3
2
1
0
25
Ic=60A
Ic=30A
Ic=15A
250µs Pulse Test
< 0.5% Duty cycle
V_GE = 15V
50
75
100
125
T_J, Junction Temperature (°C)
DC Collector Current vs Case Temperature
50
40
30
20
10
0
25
50
75 100 125 150
T_C, Case Temperature (°C)
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