APTC60DSKM45T1G Datasheet, PDF (4/7 Pages) Microsemi Corporation – Dual Buck chopper Super Junction MOSFET Power Module

APTC60DSKM45T1G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5
0.9
0.4
0.7
0.3 ^0.5
0.2
0.3
0.1
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
360
320
V_GS=15&10V
6.5V
280
6V
240
200
5.5V
160
120
5V
80
4.5V
40
4V
0
0
5
10
15
20
25
V_DS, Drain to Source Voltage (V)
1.3
1.25
1.2
R_DS(on) vs Drain Current
Normalized to
V_GS=10V @ 50A
V_GS=10V
1.15
1.1
1.05
V_GS=20V
1
0.95
0.9
0 20 40 60 80 100 120 140
I_D, Drain Current (A)
Transfert Characteristics
140
V_DS > I_D(on)xR_DS(on)MAX
120 _{250µs pulse test @ < 0.5 duty cycle}
100
80
60
40
T_J=125°C
20
T_J=25°C
0
01234567
V_GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
50
40
30
20
10
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
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