APT80GA90LD40 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
24
V_CE = 600V
22
T_J = 25°C, or 125°C
R_G = 4.7Ω
L = 100μH
20
18
16
14
12
10
0
20
40
60
80
100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
100
R_G = 4.7Ω, L = 100μH, V_CE = 600V
80
60
40
20
T_J = 25 or 125°C,V_GE = 15V
0
0
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
7000
6000
V_CE = 600V
V_GE = +15V
R_G =4.7Ω
5000
4000
T_J = 125°C
3000
2000
1000
T_J = 25°C
0
0
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
12000
10000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,94A
8000
6000
E_off,94A
4000
E_on2,47A
2000
E_off,47A
E_on2,23.5A
E_off,23.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT80GA90LD40
300
250
200
V_GE =15V,T_J=125°C
150
100
V_GE =15V,T_J=25°C
50 ^V_CE ^{= 600V}
R_G = 4.7Ω
L = 100μH
0
0
20
40
60
80
100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
175
150
T_J = 125°C, V_GE = 15V
125
100
75
50
T_J = 25°C, V_GE = 15V
25
0
0
R_G = 4.7Ω, L = 100μH, V_CE = 600V
20
40
60
80 100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
6000
5000
V_CE = 600V
V_GE = +15V
R_G = 4.7Ω
4000
3000
T_J = 125°C
2000
1000
T_J = 25°C
0
0
20
40
60
80
100
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
7000
6000
V_CE = 600V
V_GE = +15V
R_G = 4.7Ω
5000
E_on294A
E_off,94A
4000
3000
2000
1000
E_on2,47A
E_off,47A
E_on2,23.5A
E_off,23.5A
0
0 _{TJ,2J5UNCTIO5N0TEMPE75RATUR1E0(0°C)} 125
FIGURE 16, Switching Energy Losses vs Junction Temperature