APT75GT120JU2 Datasheet, PDF (4/7 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT

APT75GT120JU2
Output Characteristics (V_GE=15V)
150
125
T_J=25°C
T_J=125°C
100
75
50
25
0
0
1
2
3
4
V_CE (V)
150
125
100
75
50
25
0
5
Transfert Characteristics
T_J=25°C
T_J=125°C
6 7 8 9 10 11 12
V_GE (V)
Switching Energy Losses vs Gate Resistance
16
V_CE = 600V
14 V_GE =15V
I_C = 75A
12 _{TJ = 125°C}
10
Eon
Eoff
8
6
4
0 4 8 12 16 20 24 28 32
Gate Resistance (ohms)
Output Characteristics
150
T_J = 125°C
125
V_GE=17V
V_GE=13V
100
V_GE=15V
75
V_GE=9V
50
25
0
0
1
2
3
4
V_CE (A)
20
17.5
15
12.5
10
Energy losses vs Collector Current
V_CE = 600V
V_GE = 15V
R_G = 4.7Ω
T_J = 125°C
Eoff
Eon
7.5
5
2.5
0
0 25 50 75 100 125 150
I_C (A)
Reverse Safe Operating Area
200
175
150
125
100
75
V_GE=15V
50 _TJ=125°C
25 ^RG^=4.7Ω
0
0
400
800
1200
V_CE (V)
1600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.35
0.3
0.9
IGBT
0.25
0.7
0.2
0.5
0.15
0.1
0.3
0.05
0.1
0
0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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