APT53N60BC6 Datasheet, PDF (4/5 Pages) Microsemi Corporation – Super Junction MOSFET

Typical Performance Curves
12,000
10,000
C_iss
1000
100
10
C_oss
C_rss
0
0 100 200 300 400 500 600
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
200
100
T_J= +150°C
T_J = =25°C
10
1
0.3 0.5
0.7 0.9
1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
20
V_DD = 400V
R_G = 4.3Ω
00 _{TJ = 125°C}
L = 100μH
t
f
80
60
t
r
40
20
0
10 20 30 40 50 60 70 80 90
I_D (A)
FIGURE 14 , Rise and Fall Times vs Current
3500
3000
2500
V_DD = 400V
I_D = 53A
T_J = 125°C
L = 100μH
E_ON includes
diode reverse recovery.
E_off
E
on
2000
1500
1000
0
10
20
30
40
50
R_G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
14
I_D = 53A
12
10
8
6
APT53N60B_SC6
V_DS= 120V
V_DS= 300V
V_DS= 480V
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
200
175
t
d(off)
150
125
100
75
V_DD = 400V
R_G = 4.3 Ω
T_J = 125°C
L = 100μH
50
t
d(on)
25
0
10 20 30 40 50 60 70 80 90
I_D (A)
FIGURE 13, Delay Times vs Current
3500
3150
V_DD = 400V
R_G = 4.3Ω
2800
T_J = 125°C
L = 100μH
E_on
2450
E_ON includes
diode reverse recovery.
2100
1750
E_off
1400
1050
700
350
0
10 20 30 40 50 60 70 80
I_D (A)
FIGURE 15, Switching Energy vs Current