APT50M85JVFR Datasheet, PDF (4/4 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Graph removed
30,000
10,000
5,000
1,000
500
APT50M85JVFR
Ciss
Coss
Crss
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
20
I_D = I_D [Cont.]
VDS=100V
16
VDS=250V
12
VDS=400V
8
4
0
0
150 300 450 600 750
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
.01
.1
1
10
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
3.3 (.129)
3.6 (.143)
1.95 (.077)
2.14 (.084)
14.9 (.587)
15.1 (.594)
* Source
Drain
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
* Source
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP^® is a Registered Trademark of SGS Thomson. Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.