APT4M120K Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

20
10
I_DM
13µs
1
100µs
Rds(on)
1ms
10ms
T_J = 125°C
T_C = 75°C
100ms
DC line
0.1
1
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
20
10
I_DM
Rds(on)
APT4M120K
13µs
1
T_J = 150°C
T_C = 25°C
100µs
1ms
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
0.239
0.323
0.0025
0.124
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.60
0.50
D = 0.9
0.40
0.7
Figure 11, Transient Thermal Impedance Model
0.30
0.20
0.10
0
10^-5
0.5
Note:
t1
0.3
0.1
0.05
SINGLE PULSE
t2
t₁ =
Duty
Pulse Duration
Factor D = ^t1/^t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-220 (K) Package Outline
e3 100% Sn Plated
1.39 (.055)
0.51 (.020)
Drain
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
12.192 (.480)
9.912 (.390)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
6.85 (.270)
5.85 (.230)
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
3.683 (.145)
MAX.
14.73 (.580)
12.70 (.500)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
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