APT47N60BC3G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Super Junction MOSFET

Typical
Performance
188
OPERATION HERE
100
LIMITED BY R_DS (ON)
Curves
50
10
100μS
5
T_C =+25°C
T_J =+150°C
SINGLE PULSE
1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 9, MAXIMUM SAFE OPERATING AREA
16
I_D = 47A
1mS
10mS
12
V_DS= 120V
8
V_DS= 300V
V_DS= 480V
4
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 11, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
350
300
t
d(off)
250
200
150
V_DD = 400V
R_G = 5Ω
T_J = 125°C
L = 100μH
100
50
t_d(on)
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 13, DELAY TIMES vs CURRENT
2500
V_DD = 400V
R_G = 5Ω
E
off
2000 T_J = 125°C
L = 100μH
1500
E_ON includes
diode reverse recovery.
1000
500
E
on
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 15, SWITCHING ENERGY vs CURRENT
30,000
10,000
1,000
APT47N60BC3_SC3(G)
C_iss
C_oss
100
C_rss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
T_J =+150°C
10
T_J =+25°C
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V_DD = 400V
100 ^{RG = 5Ω}
T_J = 125°C
t_f
L = 100μH
80
60
40
t
r
20
0
0 10 20 30 40 50 60 70 80
I_D (A)
FIGURE 14, RISE AND FALL TIMES vs CURRENT
4500
V_DD = 400V
4000 _{ID = 47A}
E_off
3500
T_J = 125°C
L = 100μH
3000
E_ON includes
diode reverse recovery.
2500
2000
1500
E
on
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY VS. GATE RESISTANCE