APT38M50J_09 Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

250
100
I_DM
10
13µs
100µs
Rds(on)
1ms
1
10ms
100ms
T_J = 125°C
DC line
T_C = 75°C
0.1
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
250
100
I_DM
APT38M50J
10
13µs
Rds(on)
1
T_J = 150°C
T_C = 25°C
100µs
1ms
10ms
100ms
Scaling for Different Case & Junction
Temperatures:
0.1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125 _{DC line}
1
10
100
600
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.40
0.35
D = 0.9
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Source
* Source
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.