APT36N90BC3G Datasheet, PDF (4/5 Pages) Microsemi Corporation – Super Junction MOSFET

Typical Performance Curves
60,000
10,000
1,000
C_iss
C_oss
100
C_rss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
300
T_J= +150°C
100
T_J = =25°C
10
1
0.3 0.5
0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
0
V_DD = 600V
t_f
0
R_G = 4.3Ω
T_J = 125°C
L = 100μH
0
t
r
0
0
0
0
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 14 , Rise and Fall Times vs Current
4500
4000
3500
E
on
E
off
3000
2500
2000
1500
1000
V_DD = 600V
I_D = 36A
T_J = 125°C
L = 100μH
500
E_ON includes
diode reverse recovery.
0 _{0 10}
20 30
40 50 60
R_G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
12
I_D = 94A
10
8
6
V_DS= 180V
V_DS= 450V
APT36N90BC3G
V_DS= 720V
4
2
00
50 100 150 200 250 300
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
350
300
t_d(off)
250
200
150
V_DD = 600V
R_G = 4.3Ω
T_J = 125°C
L = 100μH
100
50
t_d(on)
0
0 10 20 30 40 50 60
I_D (A)
FIGURE 13, Delay Times vs Current
3500
V_DD = 600V
3000
R_G = 4.3Ω
T_J = 125°C
2500
L = 100μH
E_ON includes
E_off
diode reverse recovery.
2000
1500
1000
E_on
500
0
0
10 20 30 40 50 60
I_D (A)
FIGURE 15, Switching Energy vs Current