APT33N90JCU3 Datasheet, PDF (4/6 Pages) Microsemi Corporation – ISOTOP® Buck chopper Super Junction MOSFET Power Module

APT33N90JCU3
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.4
0.9
0.7
0.3
0.5
0.2
0.3
0.1
0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
120
V_GS=20, 8V
6V
80
5V
40
Breakdown Voltage vs Temperature
1000
975
950
925
0
0
5
10
15
20
V_DS, Drain to Source Voltage (V)
1000
Maximum Safe Operating Area
100 limited by RDSon
100 µs
10
1
1
Single pulse
T_J=150°C
T_C=25°C
10 ms
10
100
1000
V_DS, Drain to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
1000
100
Coss
10
Crss
1
0 25 50 75 100 125 150 175 200
V_DS, Drain to Source Voltage (V)
900
25
50
75
100 125
T_J, Junction Temperature (°C)
DC Drain Current vs Case Temperature
35
30
25
20
15
10
5
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
10
V_DS=400V
8 I_D=26A
T_J=25°C
6
4
2
0
0 50 100 150 200 250 300
Gate Charge (nC)
www.microsemi.com
4–6