APT30M60J_09 Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

200
100
I_DM
10
13µs
100µs
1ms
Rds(on)
10ms
1
100ms
DC line
T_J = 125°C
T_C = 75°C
0.1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
200
100
I_DM
APT30M60J
10
13µs
100µs
Rds(on)
1
T_J = 150°C
T_C = 25°C
1ms
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
0.1
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.40
0.35
D = 0.9
0.30
0.25
0.7
0.20
0.15
0.10
0.05
0
10^-5
0.5
Note:
t1
0.3
0.1
0.05
SINGLE PULSE
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Source
* Source
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
ISOTOP^® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.