APT30M36B2FLLG Datasheet, PDF (4/5 Pages) Microsemi Corporation – POWER MOS 7 FREDFET

336
OPERATION HERE
LIMITED BY R_DS (ON)
100
50
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
5 10
50 100 300
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I_D = 84A
14
VDS= 60V
12
VDS=150V
10
VDS= 240V
8
1mS
10mS
6
4
2
0
0 20 40 60 80 100 120 140 160 180
Q_g, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
80
t_d(off)
70
60
V_DD = 200V
50 _{RG = 5Ω}
40 ^{TJ = 125°C}
L = 100µH
30
20
t_d(on)
10
0
40
60
80
100
120
140
I_D (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
1500
V_DD = 200V
R_G = 5Ω
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
E_off
1000
E_on
500
0
40
60
80
100 120 140
I_D (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
5,000
1,000
500
100
APT30M36B2FLL_LFLL
Ciss
Coss
Crss
10
0
10
20
30
40
50
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140
V_DD = 200V
120
R_G = 5Ω
T_J = 125°C
t_f
L = 100µH
100
80
t_r
60
40
20
0
40
60
80
100 120 140
I_D (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2500
E_off
2000
1500
E_on
1000
V_DD = 200V
I_D = 84A
500
T_J = 125°C
L = 100µH
E_ON includes
diode reverse recovery.
0
0 5 10 15 20 25 30 35 40 45 50
R_G, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE