APT28F60B_09 Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET

200
100
I_DM
10
13µs
100µs
1
Rds(on)
1ms
10ms
T_J = 125°C
0.1 ^{TC = 75°C}
100ms
DC line
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT28F60B_S
200
100
I_DM
Rds(on)
10
13µs
100µs
1ms
1
T_J = 150°C
T_C = 25°C
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
1
10
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
D = 0.9
0.20
0.7
0.15
0.10
0.05
0
10^-5
Note:
0.5
t1
t2
0.3
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
SINGLE PULSE
Peak T_J = P_DM x Z_θJC + TC
0.1
0.05
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
e3 100% Sn Plated
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
D³PAK Package Outline
15.95 (.628)
16.05(.632)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99(.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.