APT27GA90K Datasheet, PDF (4/6 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
16
V_CE = 600V
14 ^TJ ^{= 25°C, or 125°C}
R_G = 10Ω
L = 100μH
12
10
8
6
4
2
0
0
5 10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
R_G = 10Ω, L = 100μH, V_CE = 600V
25
20
15
10
5
T_J = 25 or 125°C,V_GE = 15V
0
0
5
10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2000
1600
V_CE = 600V
V_GE = +15V
R_G =10Ω
1200
800
T_J = 125°C
400
T_J = 25°C
0
0
5 10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
2000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2,28A
1500
E_off,28A
1000
E_on2,14A
500
E_off,14A
E_on2,7A
E_off,7A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT27GA90K
200
175
150
125
V_GE =15V,T_J=125°C
100
75
V_GE =15V,T_J=25°C
50
25
V_CE = 600V
R_G = 10Ω
L = 100μH
0
0
5
10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
180
160
140
120
T_J = 125°C, V_GE = 15V
100
80
60
T_J = 25°C, V_GE = 15V
40
20
R_G = 10Ω, L = 100μH, V_CE = 600V
0
0
5 10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
V_CE = 600V
V_GE = +15V
R_G = 10Ω
1200
1000
800
T_J = 125°C
600
400
200
T_J = 25°C
0
0
5 10 15 20 25 30
I_CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
2000
V_CE = 600V
V_GE = +15V
R_G = 10Ω
E_on2,28A
1500
E_off,28A
1000
E_on2,14A
500
E_off,14A
E_on2,7A
E_off,7A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature