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APT26F120B2_09 Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET
200
100
IDM
10
13µs
100µs
1ms
1
Rds(on)
10ms
TJ = 125°C
TC = 75°C
0.1
100ms
DC line
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT26F120B2_L
200
100
IDM
Rds(on)
10
13µs
100µs
1
TJ = 150°C
TC = 25°C
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
0.1
1
ID = ID(TC = 25°C)*(TJ - TC)/125
10
100
DC line
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.12
0.10
D = 0.9
0.08
0.7
0.06
0.04
0.02
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
t1 = Pulse Duration
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX® (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
3.10 (.122)
3.48 (.137)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.