APT25GN120B Datasheet, PDF (4/6 Pages) Advanced Power Technology – IGBT

30
25
V_GE = 15V
20
15
10
5
V_CE = 800V
T_J = 25°C, or 125°C
R_G = 4.3Ω
L = 100µH
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
45
R_G = 4.3Ω, L = 100µH, V_CE = 800V
40
35
30
25
20
15
T_J = 25 or 125°C,V_GE = 15V
10
5
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
7000
6000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
5000
T_J = 125°C
4000
3000
2000
1000
T_J = 25°C
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
14000
12000
V_CE = 800V
V_GE = +15V
T_J = 125°C
E_on2,50A
10000
8000
E_off,50A
6000
4000 E_off,25A
2000
E_on2,25A
E_off,12.5A
0
E_on2,12.5A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT25GN120B_S(G)
350
300
V_GE =15V,T_J=125°C
250
V_GE =15V,T_J=25°C
200
150
100
50 ^VCE ^{= 800V}
R_G = 4.3Ω
L = 100µH
0
10
20
30
40
50
60
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
R_G = 4.3Ω, L = 100µH, V_CE = 800V
250
T_J = 125°C, V_GE = 15V
200
150
100
T_J = 25°C, V_GE = 15V
50
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
7000
6000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
5000
T_J = 125°C
4000
3000
2000
1000
T_J = 25°C
0
10 15 20 25 30 35 40 45 50 55
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
7000
6000
V_CE = 800V
V_GE = +15V
R_G = 4.3Ω
E_off,50A
5000
4000
E_on2,50A
3000
E_off,25A
2000
E_on2,25A
1000
E_off,12.5A
E_on2,12.5A
0
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature