APT25GF120JCU2 Datasheet, PDF (4/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

Output characteristics (V_GE=15V)
60
250µs Pulse Test
50 ^{< 0.5% Duty cycle}
40
T_J=25°C
30
T_J=125°C
20
10
0
01234567
V_CE, Collector to Emitter Voltage (V)
Transfer Characteristics
60
250µs Pulse Test
50 < 0.5% Duty cycle
40
30
20
T_J=125°C
10
T_J=25°C
0
0
2.5
5
7.5
10
V_GE, Gate to Emitter Voltage (V)
12.5
Breakdown Voltage vs Junction Temp.
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
T_J, Junction Temperature (°C)
APT25GF120JCU2
Output Characteristics (V_GE=10V)
20
250µs Pulse Test
< 0.5% Duty cycle
16
T_J=25°C
12
8
T_J=125°C
4
0
0 0.5 1 1.5 2 2.5 3 3.5
V_CE, Collector to Emitter Voltage (V)
18
16
I_C = 25A
T_J = 25°C
14
12
10
8
6
4
2
0
0
30
Gate Charge
V_CE=240V
V_CE=600V
V_CE=960V
60 90 120 150 180
Gate Charge (nC)
DC Collector Current vs Case Temperature
50
40
30
20
10
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
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