APT20GS60KR Datasheet, PDF (4/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT

TYPICAL PERFORMANCE CURVES
10
8
V_GE = 15V
6
4
2 ^VCE ^{= 400V}
T_J = 25°C, T_J =125°C
R_G = 9.1Ω
L = 100µH
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
40
R_G = 9.1Ω, L = 100µH, V_CE = 400V
35
T_J = 25 or 125°C,V_GE = 15V
30
25
20
15
10
5
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
1400
1200
1000
V_CE = 400V
V_GE = +15V
R_G = 9.1Ω
T_J = 125°C,V_GE =15V
800
600
400
200
T_J = 25°C,V_GE =15V
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2000
V_CE = 400V
V_GE = +15V
T_J = 125°C
1500
E_on2,40A
1000
E_off,40A
500
E_on2,20A
E_off,10A
E_off,20A
0
E_on2,10A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT20GS60KR(G)
180
160
140
120
V_GE =15V,T_J=125°C
100
V_GE =15V,T_J=25°C
80
60
40
20
V_CE = 400V
R_G = 9.1Ω
L = 100µH
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
30
R_G = 9.1Ω, L = 100µH, V_CE = 400V
25
20
15
10
T_J = 125°C, V_GE = 15V
T_J = 25°C, V_GE = 15V
5
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
700
600
500
V_CE = 400V
V_GE = +15V
R_G = 9.1Ω
T_J = 125°C, V_GE = 15V
400
300
200
100
T_J = 25°C, V_GE = 15V
0
0
10
20
30
40
50
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1400
1200
V_CE = 400V
V_GE = +15V
R_G = 9.1Ω
1000
E_on2,40A
800
E_off,40A
600
400 _Eon2,20A
200
E_off,20A
E_on2,10A
0
E_off,10A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature