APT19M120J Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

200
100
I_DM
10
13µs
100µs
1ms
1
Rds(on)
10ms
T_J = 125°C
T_C = 75°C
0.1
100ms
DC line
1
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT19M120J
200
100
I_DM
10 ^Rds(on)
100ms
DC line
13µs
100µs
1
T_J = 150°C
T_C = 25°C
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
Dissipated Power
(Watts)
T_J (°C)
T_C (°C)
0.0506
0.0624
0.118
0.0213
0.180
0.511
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
0.25
D = 0.9
0.20
0.15
0.10
0.05
0
10^-5
0.7
0.5
Note:
t1
0.3
0.1
0.05
SINGLE PULSE
t2
t₁ =
Duty
Pulse Duration
Factor D = ^t1/^t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Source
* Source
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
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