APT17F120J Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET

200
100
I_DM
10
13µs
100µs
1ms
1
Rds(on)
10ms
T_J = 125°C
T_C = 75°C
0.1
100ms
DC line
1
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT17F120J
200
100
I_DM
Rds(on)
10
13µs
100µs
1
T_J = 150°C
T_C = 25°C
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
0.1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
DC line
1
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
0.20
D = 0.9
0.15
0.10
0.05
0
10^-5
0.7
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
0.1
1
10
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
r = 4.0 (.157)
(2 places)
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
* Source
* Source
1.95 (.077)
2.14 (.084)
Drain
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Gate
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
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