English
Language : 

APT15F50K Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET
60
IDM
10
13µs
100µs
1
Rds(on)
1ms
10ms
100ms
TJ = 125°C
TC = 75°C
0.1
DC line
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
APT15F50K
60
IDM
10 Rds(on)
13µs
100µs
1 TJ = 150°C
TC = 25°C
1ms
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
ID = ID(TC = 25°C)*(TJ - TC)/125
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.60
D = 0.9
0.50
0.40
0.7
0.30
0.20
0.10
0
10-5
0.5
0.3
0.1
0.05
SINGLE PULSE
Note:
t1
t2
t1 = Pulse Duration
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-220 (K) Package Outline
e3 100% Sn Plated
Drain
Gate
Drain
Source
Dimensions in Inches and (Millimeters)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.