APT100GT60B2R Datasheet, PDF (4/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
35
30
V_GE = 15V
25
20
15
10
V_CE = 400V
5 ^TJ ^{= 25°C, or 125°C}
R_G = 4.3Ω
L = 100µH
0
0 25 50 75 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
250
R_G = 4.3Ω, L = 100µH, V_CE = 400V
200
150
100
50
T_J = 25 or 125°C,V_GE = 15V
0
0 25 50 75 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
16000
14000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
12000
10000
T_J = 125°C
8000
6000
4000
2000
T_J = 25°C
0
0 25 50 75 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
35000
30000
V_CE = 400V
V_GE = +15V
T_J = 125°C
E_on2,200A
25000
20000
15000
10000
E_off,200A
E_on2,100A
E_off,100A
5000
E_off,50A
0
E_on2,50A
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT100GT60B2R_LR(G)
450
400
350
300
250
V_GE =15V,T_J=25°C _{VGE =15V,TJ=125°C}
200
150
100
V_CE = 400V
50 R_G = 4.3Ω
L = 100µH
0
0 25 50
75 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
R_G = 4.3Ω, L = 100µH, V_CE = 400V
180
160
T_J = 125°C, V_GE = 15V
140
120
100
80
60
40
T_J = 25°C, V_GE = 15V
20
0
0 25 50 75 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
12000
10000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
8000
T_J = 125°C
6000
4000
2000
T_J = 25°C
0
0 25 50 70 100 125 150 175 200 225
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
16000
14000
V_CE = 400V
V_GE = +15V
R_G = 4.3Ω
E_on2,200A
12000
10000 ^Eoff,200A
8000
6000
4000 ^Eon2,^100A
2000 E_off,50A
E_off,100A
0
E_on2,50A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature