MRF5812 Datasheet, PDF (3/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

FUNCTIONAL
Symbol
Test Conditions
NFmin
G
NF
G
U max
MSG
|S₂₁|²
Minimum Noise Figure
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Power Gain @ Nfmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
MRF5812, R1, R2
Value
Min.
Typ.
Max.
Unit
-
2.0
3.0
dB
13
15.5
dB
-
17.8
-
dB
-
20
-
dB
-
15
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
(MHz)
100
300
500
1000
2000
3000
S11
|S11|
∠φ
.579
-141
.593
-173
.598
175
.592
158
.615
115
.691
72
S21
|S21|
∠φ
24
107
8.93
85
5.14
74
2.64
52
1.55
20
1.10
-5
S12
|S12|
∠φ
.024
49
.045
66
.066
69
.132
72
.310
63
.518
41
S22
|S22|
.397
.233
.248
.347
.531
.648
∠φ
-76
-103
-110
-119
-141
-172
MSC1319.PDF 10-25-99