MRF555 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF555
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Power Gain
Test Circuit-Figure 1
GPE
Pout = 1.5 W, VCE =12.5Vdc 11
12.5
-
dB
f = 470 MHz
Collector Efficiency
Test Circuit-Figure 1
η
Pout = 1.5 W, VCE =12.5Vdc 50
60
-
%
f = 175 MHz
ψ
Load Mismatch
Test Circuit-Figure 1
VSWR ≥ 10:1 All Phase Angles
Pout = 1.5 W, VCE =12.5Vdc No Degradation in Output Power
-
f = 175 MHz
MSC1316.PDF 10-25-99