MRF553 Datasheet, PDF (3/5 Pages) Motorola, Inc – RF LOW POWER TRANSISTOR NPN SILICON

MRF553
FUNCTIONAL
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
Power Gain
Test Circuit-Figure 1
GPE
Pout = 1.5 W, VCE =12.5Vdc 11.5
13
-
dB
f = 175 MHz
Collector Efficiency
Test Circuit-Figure 1
η
Pout = 1.5 W, VCE =12.5Vdc 50
60
-
%
f = 175 MHz
ψ
Load Mismatch
Test Circuit-Figure 1
VSWR ≥ 10:1 All Phase Angles
Pout = 1.5 W, VCE =12.5Vdc No Degradation in Output Power
-
f = 175 MHz
Figure 1. 140–175 MHz Broadband Circuit Schematic, Stub tuning implemented on the input to improve match. Microsemi fixture schematic with
input match optimization will be available in the final version of the data sheet.
C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0 µF Erie Red Cap Capacitor C6, C10 — 0.1 µF, 35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 kΩ, 1/4 W
R2 — 100 Ω, 1/4 W
D1 — 1N4148 Diode
L1 — 3 Turns, #18 AWG, 0.210, ID, 3/16, Length
L2, L4, L7 — 0.62,, #18 AWG Wire Bent into “V” L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27Mils
L5 — 12 µH Molded Choke
L8 — 7 Turns, #18 AWG, 0.170, ID, 7/16, Length
L9 — 1.0,, #18 AWG Wire with 5 Ferrite Beads B — Ferrite Bead
Thick Alumina Substrate
Board Material — Glass Teflon, ε r = 2.56, t = 0.0625,
MSC1316.PDF 10-25-99