BFR96 Datasheet, PDF (3/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

BFR96
FUNCTIONAL
Symbol
Test Conditions
NF
|S₂₁|²
MSG
G
U max
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Insertion Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Stable Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain (1)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Value
Min.
Typ.
Max.
Unit
-
2.0
-
dB
12
13
-
dB
-
16.5
-
dB
-
14.5
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
(MHz)
100
200
300
500
700
800
1000
1500
S11
|S11|
0.388
0.422
0.432
0.447
0.454
0.462
0.479
0.470
∠φ
-130
-158
-168
178
170
167
159
138
S21
|S21|
21
11
7.5
4.6
3.4
3
2.5
1.8
∠φ
112
94
86
75
65
61
53
32
S12
|S12|
0.029
0.046
0.064
0.103
0.144
0.165
0.212
0.333
∠φ
66
89
72
75
74
74
72
66
S22
|S22|
0.416
∠φ
-54
0.277
-71
0.229
-79
0.224
-92
0.246
-100
0.26
-103
0.284
-112
0.375
-134
MSC1309.PDF 10-25-99