ARF300_10 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

Dynamic Characteristics
8
7
6
5
4
3
2
1
0
-50
0
50
100
150
T_C, CASE TEMPERATURE (°C)
Figure 4, Typical Threshold Voltage vs Temperature
ARF300
60
15V
10V
50
8V
40
7.5V
30
6.5V
20
6V
10
5.5V
0
0
5 10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5, Typical Output Characteristics
0.16
0.14 ^{D = 0.9}
0.12
0.7
0.10
0.08
0.5
0.06
0.3
0.04
0.02
0.1
0.05
SINGLE PULSE
0
10^-4
10^-3
10^-2
10^-1
0.1
1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 6a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Dissipated Power
(Watts)
T_J (˚C)
T_C (˚C)
0.068
0.0150
0.062
0.135
0.019
2.133
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 6b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.56
27.12
40.68
Z_in (Ω)
18 - j 10.5
2.66 - j 4.6
1.79 - j 1.6
1.68 - j 0.14
Z_OL (Ω)
21 - j 1.4
17.5 - j 7.8
11.7 - j 10.4
7.7 - j 10
Z_IN - Gate shunted with 25Ω
I_dq = 0
Z_OL - Conjugate of optimum load for 300 Watts output at V_dd=125V