APTGT150H120G Datasheet, PDF (3/6 Pages) Microsemi Corporation – Full - Bridge Fast Trench + Field Stop IGBT Power Module

APTGT150H120G
Thermal and package characteristics
Symbol Characteristic
R_thJC Junction to Case Thermal Resistance
IGBT
Diode
V_ISOL
T_J
T_{ST G}
T_C
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M6
For terminals
M5
Wt Package Weight
Min Typ Max Unit
0.18 _°C/W
0.30
2500
V
-40
150
-40
125 °C
-40
100
3
2
5
3.5
N.m
280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
www.microsemi.com
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