APTGT100A120D1G Datasheet, PDF (3/4 Pages) Microsemi Corporation – Phase Leg Trench + Field Stop IGBT Power Module

APTGT100A120D1G
Thermal and package characteristics
Symbol Characteristic
R_thJC Junction to Case Thermal Resistance
IGBT
Diode
V_ISOL
T_J
T_STG
T_C
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
For terminals
M5
To Heatsink
M6
Wt Package Weight
D1 Package outline (dimensions in mm)
Min Typ Max Unit
0.24 _°C/W
0.48
4000
V
-40
150
-40
125 °C
-40
125
2
3.5
N.m
3
5
180 g
Typical Performance Curve
Operating Frequency vs Collector Current
50
VCE=600V
40
D=50%
ZCS
RG=7.5 Ω
T_J=125°C
30
T_C=75°C
ZVS
20
10
Hard
switching
0
0 20 40 60 80 100 120 140
IC (A)
Forward Characteristic of diode
200
150
100
50
TJ=125°C
TJ=25°C
0
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.9
Diode
0.4
0.7
0.3
0.5
0.2 _0.3
0.1 0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
3-4