APTGL90DA120T1G Datasheet, PDF (3/5 Pages) Microsemi Corporation – Boost chopper Trench + Field Stop IGBT4 Power module

APTGL90DA120T1G
Thermal and package characteristics
Symbol Characteristic
R_thJC Junction to Case Thermal Resistance
IGBT
Diode
V_ISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
T_J Operating junction temperature range
T_STG Storage Temperature Range
T_C Operating Case Temperature
Torque Mounting torque
To heatsink
M4
Wt Package Weight
Min Typ Max Unit
0.39 _°C/W
0.62
2500
V
-40
175
-40
125 °C
-40
100
2.5
4.7 N.m
80 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R₂₅
∆R₂₅/R₂₅
B_25/85
∆B/B
Resistance @ 25°C
T₂₅ = 298.15 K
T_C=100°C
50
5
3952
4
R_T
=
R₂₅
⎡
exp_⎢
⎣
B₂₅
/
85
⎜⎜⎝⎛
1
T₂₅
−
1
T
⎟⎟⎠⎞⎥⎦⎤
T: Thermistor temperature
R_T: Thermistor value at T
Max
Unit
kΩ
%
K
%
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
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