APT80M60J Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

500
V_GS = 10V
400
300
200
T_J = -55°C
T_J = 25°C
100
T_J = 150°C
T_J = 125°C
0
0
5
10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
V_GS = 10V @ 60A
2.5
2.0
1.5
1.0
0.5
0-55 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
250
200
T_J = -55°C
T_J = 25°C
150
T_J = 125°C
100
50
0
0 20 40 60 80 100 120 140 160
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 60A
14
12
V_DS = 120V
10
V_DS = 300V
8
6
V_DS = 480V
4
2
0
0 100 200 300 400 500 600 700 800 900
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
200
180 ^{TJ = 125°C}
160
V_GS= 7&8V
APT80M60J
140
120
6V
100
80
60
5.5V
40
20
5V
4.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
450
400
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
350
300
250
T_J = -55°C
200
T_J = 25°C
150
T_J = 125°C
100
50
0
01 2 3 4 5 6 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
30,000
C_iss
10,000
1000
100
C_oss
C_rss
10
0 100 200 300 400 500 600
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
450
400
350
300
250
T_J = 25°C
200
150
T_J = 150°C
100
50
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage