APT8020JFLL Datasheet, PDF (3/5 Pages) Advanced Power Technology – Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Typical Performance Curves
Dissipated Power
(Watts)
T_J ( C)
T_C ( C)
0.0528
0.0651
0.123
0.0203
0.173
0.490
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
TJ = +125°C
40
TJ = -55°C
TJ = +25°C
20
0
0
2
4
6
8
10
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
35
30
25
20
15
10
5
0
25
50
75
100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I_D = 16.5A
V_GS = 10V
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
APT8020JFLL
100
80
VGS =15 &10 V
60
40
8V
7V
6.5V
6V
20
5.5V
5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
NORMALIZED TO
V_GS = 10V @ I_D = 16.5A
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0 10 20 30 40 50 60 70 80
I_D, DRAIN CURRENT (AMPERES)
FIGURE 5, R_DS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)