APT60DS04HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP Schottky Diode Full Bridge Power Module

APT60DS04HJ
Typical Performance Curve
Forward Characteristic
120
100
80
T_J=125°C
60
40
T_J=25°C
20
0
0.0 0.2 0.4 0.6 0.8 1.0
V_F (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8 _0.9
0.6 ^0.7
0.5
0.4
0.3
0.2 _0.1
0.05
0
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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