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APT56F50B2 Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel FREDFET
200
VGS = 10V
160
TJ = -55°C
120
TJ = 25°C
80
40
TJ = 150°C
TJ = 125°C
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
VGS = 10V @ 28A
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
60
TJ = -55°C
50
TJ = 25°C
TJ = 125°C
40
30
20
10
00
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 28A
14
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
00 50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
100
TJ = 125°C
90
80
APT56F50B2_L
VGS= 7 & 10V
6.5V
70
60
6V
50
40
5.5V
30
20
5V
10
0
0
5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
175
150
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
125
TJ = -55°C
100
TJ = 25°C
75
TJ = 125°C
50
25
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
Ciss
1000
100
Coss
Crss
10
0
100 200
300 400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
175
150
125
100
TJ = 25°C
75
TJ = 150°C
50
25
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage