APT51M50J Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

300
V_GS = 10V
250
200
150
T_J = -55°C
T_J = 25°C
100
50
T_J = 150°C
T_J = 125°C
0
0
5
10
15
20
25
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
2.5
NORMALIZED TO
V_GS = 10V @ 37A
2.0
1.5
1.0
0.5
0
-55 -25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
100
T_J = -55°C
80
T_J = 25°C
60
T_J = 125°C
40
20
0
0 10 20 30 40 50 60 70 80
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 37A
14
12
V_DS = 100V
10
V_DS = 250V
8
6
4
V_DS = 400V
2
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
140
T_J = 125°C
120
V_GS= 7,8 & 10V
APT51M50J
100
6V
80
60
40
5V
20
4.5V
0
0
5 10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
250
200
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
T_J = -55°C
100
T_J = 25°C
T_J = 125°C
50
0
01 2 3 4 5 6 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
C_iss
1000
100
C_oss
C_rss
10
0
100 200
300 400
500
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
200
180
160
140
120
T_J = 25°C
100
80
T_J = 150°C
60
40
20
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage