APT50GT60BRDL Datasheet, PDF (3/9 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
160
V_GE = 15V
140
120
T_J = 25°C
100
T_J = -55°C
80
T_J = 125°C
60
40
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
160
250µs PULSE
TEST<0.5 % DUTY
140
CYCLE
T_J = -55°C
120
100
80
60
T_J = 25°C
40
T_J = 125°C
20
0
0
2
4
6
8
10 12
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
I_C = 100A
3
I_C = 50A
2
I_C = 25A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
200
15V 13V
180
11V
160
140
10V
APT50GT60BRDL(G)
120
100
9V
80
8V
60
40
7V
20
6V
0
0
5
10
15
20
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 50A
14 ^{TJ = 25°C}
12
V_CE = 120V
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0
3.5
50
100 150 200 250
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.0
I_C = 100A
2.5
I_C = 50A
2.0
1.5
I_C = 25A
1.0
0.5
V_GE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0
25
50
75
100 125
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
80
Lead Temperature
Limited
60
40
20
0
-50 -25 0 25 50 75 100 125 150
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature