APT50GT120B2R Datasheet, PDF (3/6 Pages) Microsemi Corporation – Thunderbolt IGBT

Typical Performance Curves
150
V_GE = 15V
125
T_J= 25°C
T_J= 55°C
100
75
T_J= 125°C
50
25
T_J= 150°C
0
01
2345
6 78
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
150
250μs PULSE
TEST<0.5 % DUTY
CYCLE
125
100
75
50
T_J= -55°C
25
T_J= 25°C
T_J= 125°C
0
024
6
8 10 12 14
V_CE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250μs PULSE TEST
5
<0.5 % DUTY CYCLE
I_C = 100A
4
3
I_C = 50A
2
I_C = 25A
1
0
8 9 10 11 12 13 14 15 16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
150
15V
13V
125
100
APT50GT120B2R_LR(G)
11V
10V
75
9V
50
8V
25
7V
6V
0
0
5 10 15 20 25 30
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
16
I_C = 50A
14 ^{TJ = 25°C}
V_CE = 240V
V_CE = 600V
12
10
V_CE = 960V
8
6
4
2
0
0 50 100 150 200 250 300 350
GATE CHARGE (nC)
FIGURE 4, Gate charge
7
V_GE = 15V.
250μs PULSE TEST
6 ^{<0.5 % DUTY CYCLE}
I_C = 100A
5
4
I_C = 50A
3
I_C = 25A
2
1
0
25
50
75
100
125
150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
100
80
60
40
20
0
25
50
75
100
125
150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature