APT50DL120HJ Datasheet, PDF (3/3 Pages) Microsemi Corporation – ISOTOP Fast Diode Full Bridge Power Module

APT50DL120HJ
Typical Performance Curve
Forward Characteristic of diode
100
80
60
40
20
0
0
T_J=125°C
T_J=125°C
T_J=25°C
0.5
1
1.5
2
2.5
V_F (V)
Energy losses vs Collector Current
6
V_CE = 600V
5 ^VGE ^{= -15V}
T_J = 125°C
4
3
2
1
0
0
20
40
60
80 100
I_F (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.9
0.6
0.7
0.4 ^0.5
0.3
0.2
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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