APT5010JVRU3 Datasheet, PDF (3/7 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5010JVRU3
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
MOSFET
Diode
0.28
1.21 ^°C/W
R_thJA Junction to Ambient (IGBT & Diode)
20
V_ISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
T_J,T_STG Storage Temperature Range
T_L Max Lead Temp for Soldering:0.063” from case for 10 sec
2500
-55
V
150
300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
1.5 N.m
Wt Package Weight
29.2
g
Typical MOSFET Performance Curve
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3–7