APT45M100J_09 Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

200
V_GS = 10V
180
160
T_J = -55°C
140
120
100
T_J = 25°C
80
60
40
T_J = 125°C
20
T_J = 150°C
0
0
5
10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
V_GS = 10V @ 33A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
90
80
70
T_J = -55°C
60
T_J = 25°C
50
T_J = 125°C
40
30
20
10
0
0
10
20
30
40
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 33A
14
12
V_DS = 200V
10
V_DS = 500V
8
6
V_DS = 800V
4
2
0
0 100 200 300 400 500 600 700 800
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
70
T_J = 125°C
60
50
V_GS= 6, 7, 8 & 9V
APT45M100J
40
30
5V
20
10
4.5V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
250
200
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
T_J = -55°C
100
T_J = 25°C
T_J = 125°C
50
0
0
30,000
1 2 3 4 56 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
10,000
C_iss
1000
100
C_oss
C_rss
10
0
200 400 600 800 1000
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
250
200
150
T_J = 25°C
100
T_J = 150°C
50
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage