APT43GA90B Datasheet, PDF (3/6 Pages) Microsemi Corporation – High Speed PT IGBT

Typical Performance Curves
40
V_GE = 15V _{TJ= 55°C}
35
30
25
20
T_J= 125°C
15
T_J= 25°C
10
T_J= 150°C
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T_J = 25°C)
250
250μs PULSE
TEST<0.5 % DUTY
CYCLE
200
150
100
T_J= 25°C
50
T_J= 125°C
T_J= -55°C
0
0 2 4 6 8 10 12 14
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
6
T_J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
5
4
I_C = 50A
3
I_C = 25A
2
I_C = 12.5A
1
0
6
8
10
12
14
16
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
300
15V
13V
250
APT43GA90B_S
12V
200
11V
150
10V
100
9V
50
8V
5V
0
0
5 10 15 20 25 30
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 25°C)
12
I_C = 25A
T_J = 25°C
10
V_CE = 180V
8
V_CE = 450V
6
V_CE = 720V
4
2
0
0
6
50 100 150 200 250 300
GATE CHARGE (nC)
FIGURE 4, Gate charge
5
4
I_C = 50A
3
I_C = 25A
2
I_C = 12.5A
1
V_GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
0
50
100
150
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
120
100
80
60
40
20
0
25 50
75
100 125 150
T_C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature