APT41M80B2 Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

100
V_GS = 10V
90
80
T_J = -55°C
70
T_J = 25°C
60
50
40
30
20
T_J = 125°C
T_J = 150°C
10
0
0
5
10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
V_GS = 10V @ 20A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
60
50
T_J = -55°C
T_J = 25°C
40
T_J = 125°C
30
20
10
0
0 5 10 15 20 25 30 35
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 20A
14
12
V_DS = 160V
10
V_DS = 400V
8
6
V_DS = 640V
4
2
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
50
T_J = 125°C
40
30
V_GS= 10, & 15V
V_GS= 6, & 6.5V
APT41M80B2_L
5.5V
20
5V
10
4.5V
4V
0
0
5
10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
150
125
V_DS> I_D(ON) x R_DS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
T_J = -55°C
75
T_J = 25°C
50
T_J = 125°C
25
0
01 2 3 4 56 7 8
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
C_iss
1,000
C_oss
100
C_rss
10
0
200
400
600
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
150
125
100
T_J = 25°C
75
T_J = 150°C
50
25
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage